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Point defect evolution in low-temperature MOCVD growth of InN : Indium Nitride and Related Alloys

Identifieur interne : 001676 ( Main/Repository ); précédent : 001675; suivant : 001677

Point defect evolution in low-temperature MOCVD growth of InN : Indium Nitride and Related Alloys

Auteurs : RBID : Pascal:12-0043532

Descripteurs français

Pascal (Inist)
- Défaut ponctuel, Méthode MOCVD, Annihilation positon, Profil raie, Mécanisme croissance, Porteur libre, Densité porteur charge, Défaut complexe, Densité lacune, Formation défaut, Nitrure d'indium, Nitrure de gallium, InN.

English descriptors

KwdEn :
- Carrier density, Complex defect, Defect formation, Free carrier, Gallium nitride, Growth mechanism, Indium nitride, Line shape, MOCVD, Point defects, Positron annihilation, Vacancy density.

Abstract

We present a systematic study of the influence of the growth temperature on the point defect landscape in metal-organic chemical vapor deposition (MOCVD) InN. State-of-the-art InN layers were grown at temperatures from 500 to 550 °C and positron annihilation spectroscopy has been used to investigate the incorporation of vacancy defects during the growth process. We find that a decrease of the growth temperature below 550 °C leads to increasing free carrier concentrations and lower mobilities. At the same time, positron measurements observe an enhanced introduction of mixed In-N vacancy complexes which gather preferentially at the interface between the InN layer and the GaN template. As the measured In vacancy concentration seems too low to promote efficient defect complexing, it suggests an increased formation of N vacancies at low temperature growth through insufficient cracking of NH₃, which may be responsible for the observed increase in the free carrier concentration.

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Pascal:12-0043532

Le document en format XML

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<author><name sortKey="Rauch, Christian" uniqKey="Rauch C">Christian Rauch</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Aalto University, P.O. Box I 1100</s1>
<s2>00076 Aalto, Espoo</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Finlande</country>
<wicri:noRegion>00076 Aalto, Espoo</wicri:noRegion>
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</author>
<author><name sortKey="Tuna, Ocal" uniqKey="Tuna O">Ocal Tuna</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>AIXTRON SE, Kaiserstr. 98</s1>
<s2>52134 Herzogenrath</s2>
<s3>DEU</s3>
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<country>Allemagne</country>
<wicri:noRegion>52134 Herzogenrath</wicri:noRegion>
<wicri:noRegion>Kaiserstr. 98</wicri:noRegion>
<wicri:noRegion>52134 Herzogenrath</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Giesen, Christoph" uniqKey="Giesen C">Christoph Giesen</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>AIXTRON SE, Kaiserstr. 98</s1>
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<country>Allemagne</country>
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<wicri:noRegion>Kaiserstr. 98</wicri:noRegion>
<wicri:noRegion>52134 Herzogenrath</wicri:noRegion>
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</author>
<author><name sortKey="Heuken, Michael" uniqKey="Heuken M">Michael Heuken</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>AIXTRON SE, Kaiserstr. 98</s1>
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<wicri:noRegion>52134 Herzogenrath</wicri:noRegion>
</affiliation>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24</s1>
<s2>52074 Aachen</s2>
<s3>DEU</s3>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region>
<region type="district" nuts="2">District de Cologne</region>
<settlement type="city">Aix-la-Chapelle</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Tuomisto, Filip" uniqKey="Tuomisto F">Filip Tuomisto</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Aalto University, P.O. Box I 1100</s1>
<s2>00076 Aalto, Espoo</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Finlande</country>
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<publicationStmt><idno type="inist">12-0043532</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0043532 INIST</idno>
<idno type="RBID">Pascal:12-0043532</idno>
<idno type="wicri:Area/Main/Corpus">002378</idno>
<idno type="wicri:Area/Main/Repository">001676</idno>
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<seriesStmt><idno type="ISSN">1862-6300</idno>
<title level="j" type="abbreviated">Phys. status solidi, A Appl. mater. sci. : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term>
<term>Complex defect</term>
<term>Defect formation</term>
<term>Free carrier</term>
<term>Gallium nitride</term>
<term>Growth mechanism</term>
<term>Indium nitride</term>
<term>Line shape</term>
<term>MOCVD</term>
<term>Point defects</term>
<term>Positron annihilation</term>
<term>Vacancy density</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Défaut ponctuel</term>
<term>Méthode MOCVD</term>
<term>Annihilation positon</term>
<term>Profil raie</term>
<term>Mécanisme croissance</term>
<term>Porteur libre</term>
<term>Densité porteur charge</term>
<term>Défaut complexe</term>
<term>Densité lacune</term>
<term>Formation défaut</term>
<term>Nitrure d'indium</term>
<term>Nitrure de gallium</term>
<term>InN</term>
</keywords>
</textClass>
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</teiHeader>
<front><div type="abstract" xml:lang="en">We present a systematic study of the influence of the growth temperature on the point defect landscape in metal-organic chemical vapor deposition (MOCVD) InN. State-of-the-art InN layers were grown at temperatures from 500 to 550 °C and positron annihilation spectroscopy has been used to investigate the incorporation of vacancy defects during the growth process. We find that a decrease of the growth temperature below 550 °C leads to increasing free carrier concentrations and lower mobilities. At the same time, positron measurements observe an enhanced introduction of mixed In-N vacancy complexes which gather preferentially at the interface between the InN layer and the GaN template. As the measured In vacancy concentration seems too low to promote efficient defect complexing, it suggests an increased formation of N vacancies at low temperature growth through insufficient cracking of NH<sub>3</sub>
, which may be responsible for the observed increase in the free carrier concentration.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Point defect evolution in low-temperature MOCVD growth of InN : Indium Nitride and Related Alloys</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>RAUCH (Christian)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>TUNA (Ocal)</s1>
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<fA11 i1="03" i2="1"><s1>GIESEN (Christoph)</s1>
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<fA11 i1="04" i2="1"><s1>HEUKEN (Michael)</s1>
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<fA11 i1="05" i2="1"><s1>TUOMISTO (Filip)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Applied Physics, Aalto University, P.O. Box I 1100</s1>
<s2>00076 Aalto, Espoo</s2>
<s3>FIN</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="02"><s1>AIXTRON SE, Kaiserstr. 98</s1>
<s2>52134 Herzogenrath</s2>
<s3>DEU</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24</s1>
<s2>52074 Aachen</s2>
<s3>DEU</s3>
<sZ>4 aut.</sZ>
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<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
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<fA61><s0>A</s0>
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<fC01 i1="01" l="ENG"><s0>We present a systematic study of the influence of the growth temperature on the point defect landscape in metal-organic chemical vapor deposition (MOCVD) InN. State-of-the-art InN layers were grown at temperatures from 500 to 550 °C and positron annihilation spectroscopy has been used to investigate the incorporation of vacancy defects during the growth process. We find that a decrease of the growth temperature below 550 °C leads to increasing free carrier concentrations and lower mobilities. At the same time, positron measurements observe an enhanced introduction of mixed In-N vacancy complexes which gather preferentially at the interface between the InN layer and the GaN template. As the measured In vacancy concentration seems too low to promote efficient defect complexing, it suggests an increased formation of N vacancies at low temperature growth through insufficient cracking of NH<sub>3</sub>
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<s5>03</s5>
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<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Line shape</s0>
<s5>05</s5>
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<fC03 i1="05" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>06</s5>
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<s5>06</s5>
</fC03>
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<s5>06</s5>
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<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Free carrier</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Portador libre</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Densité porteur charge</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Carrier density</s0>
<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Defecto complejo</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Densité lacune</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Vacancy density</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Densidad vacuidad</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Formation défaut</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Defect formation</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Formación defecto</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>15</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>17</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fN21><s1>023</s1>
</fN21>
</pA>
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Point defect evolution in low-temperature MOCVD growth of InN : Indium Nitride and Related Alloys

Point defect evolution in low-temperature MOCVD growth of InN : Indium Nitride and Related Alloys

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri